2017年第三届半导体物理与器件国际会议(ICSPD 2017)-1月-泰国曼谷
The 3rd Int'l Conference on Semiconductor Physics and Devices (ICSPD 2017)
一、会议网站:
http://www.engii.org/workshop/ICSPD/
二、会议简介:
2017年第三届半导体物理与器件国际会议(ICSPD 2017)将于2017年1月3-5日在泰国曼谷举行。本届大会将特邀国内外半导体物理与器件研究领域内的学者专家前来参会,并做出精彩的报告。本次大会旨在为行业内专家和学者分享技术进步和业务经验,聚焦半导体物理与器件的前沿研究,提供一个交流的平台。2017年第三届半导体物理与器件国际会议(ICSPD 2017)是由多方科研单位及高校共同协办,在领域内享受盛名的国际学术研讨会之一。
所有录用文章将被发表在"Journal of Applied Mathematics and Physics" (ISSN:2327-4352),该期刊使您发表的论文得到最广泛的阅览和传播。详情请点击:http://www.scirp.org/journal/jamp/
三、投稿及注册链接:
四、会议演讲人:
Eugene O. Kamenetskii, Ben Gurion University of the Negev, Israel
Title: Magnetic-dipolar-mode oscillations for microwave chemical and biological sensing
Prof. Yuri Penionzhkevich, Joint Institute for Nuclear Research,, Russia
Title: Nuclei and Astrophysics
Prof. Zhuge Yan, University of Southern Queensland, Australia\
Title: Progressive failure of masonry shear walls – a distinct element approach
Prof. Farzad Mashayek, University of Illinois at Chicago, USA
Title: High-fidelity Simulation of Turbulent Reacting Flows
Dr. T.N. Anh Nguyen, Vietnam Academy of Science and Technology, Vietnam
Title: Tunable Magnetic Anisotropy in Metallic Multilayers: A Promising New Avenue to Next Generation Spintronics Devices
Dr. Mostafa Ranjbar, Eastern Mediterranean University, Turkey
Prof. Peng-Sheng Wei,National Sun Yat Sen University, Chinese Taipei
五、征稿方向:
Physics of Semiconductors
Semiconductor Spintronics / Topological Insulators
Wide/narrow Band-gap Semiconductors
Semiconductor Lower Dimensions and Nanostructures
High Magnetic Fields / High Pressure in Semiconductor Physics
Ferromagnetism / Magnetic Semiconductors
Impurities/Defects in Semiconductors
Photophysics & Transient Absorption Spectroscopy/Measurements
Surface and Interface Physics
Semiconductor Quantum Dots / Quantum Hall Effects / Quantum Information
Semiconductor Materials and Applications / Semiconductor Processing
Complex Oxides
Organic Semiconductors
Compound Semiconductors
Light Emitting Diodes (LEDs) and Diode Lasers
Photoelectric and Photovoltaic Devices
Semiconductor Detectors
Device Design and Fabrication
Device Performance and Reliability
Emerging Semiconductor Technologies
Novel Semiconductor Devices and Applications
Other Related Topics
六、投稿说明:
1、论文须是英文稿件,且论文应具有学术或实用价值,未在国内外学术期刊或会议发表过。发表论文的作者需提交全文进行评审,只做报告不发表论文的作者只需提交摘要。
2、论文需要符合主题、论据充分、具备实用价值和创新性。
七、会议日程概况:
1月3日 14:00-16:00 Registration
16:00-16:20 Registration
16:20-18:00 Registration
1月4日 8:30-10:00 Invited Speech Session
10:00-10:20 Coffee Break
10:20-12:00 Invited Speech Session
14:00-16:00 Invited Speech Session
16:00-16:20 Coffee Break
16:20-18:00 Invited Speech Session
1月5日 8:30-10:00 Technical Session
10:00-10:20 Coffee Break
10:20-12:00 Technical Session
14:00-16:00 Technical Session
16:00-16:20 Coffee Break
16:20-18:00 Technical Session
八、联系方式:
Email: phy.feb@engii.org
Tel: +86 132 6470 2250
QQ: 3025797047
微信公众号: Engii_hw (关注微信公众号进行参会和投稿咨询,获取会议最新消息)
|